A Review Report on Ballistic Transport and Self Heating Effect (SHE) in Nanoscale Strained –Silicon MOSFETS
نویسندگان
چکیده
As MOS Transistors channel length continues to scale beyond 90nm, classical drift-diffusion model for carrier transport of such type of devices is not valid. For these dimensions of Transistors QuasiBallistic/ Ballistic transport phenomena occur and a new mobility model is required to predict electrical behavior of these devices perfectly. Selfheating is also one the importance critical problem for Nanoscale devices. In this article we re -examine the “Ballistic mobility” and “self-heating” for Nanoscale strained-silicon MOSFETs. KeytermsBallistic Transport, MOSFET, Strained – Silicon, Self Heating Effect (SHE), Bulk MOSFET
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